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Vishay General Semiconductor - Diodes Division BYW29-100-E3/45 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BYW29-100-E3/45

MPNBYW29-100-E3/45
Active

DIODE GEN PURP 100V 8A TO220AC

PackagingTO-220-2
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYW29-100-E3/45 specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if1.3 V @ 20 A
Current - reverse leakage @ vr10 µA @ 100 V
Current - average rectified8A
Operating temperature - junction-65°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-2
Capacitance @ vr,45pF @ 4V, 1MHz
Reverse recovery time25 ns