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Vishay General Semiconductor - Diodes Division BYVF32-150HE3_A/P — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BYVF32-150HE3_A/P

MPNBYVF32-150HE3_A/P
Active
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYVF32-150HE3_A/P specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)150 V
Voltage - forward (Vf) (Max) @ if1.15 V @ 20 A
Current - reverse leakage @ vr10 µA @ 150 V
Current - average rectified (Io) (per diode)18A
Operating temperature - junction-65°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-3 Full Pack, Isolated Tab
Diode configuration1 Pair Common Cathode
Reverse recovery time25 ns