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Vishay General Semiconductor - Diodes Division BYVF32-100HE3_A/P — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BYVF32-100HE3_A/P

MPNBYVF32-100HE3_A/P
Active
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYVF32-100HE3_A/P specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if1.15 V @ 20 A
Current - reverse leakage @ vr10 µA @ 100 V
Current - average rectified (Io) (per diode)18A
Operating temperature - junction-65°C ~ 150°C
GradeAutomotive
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
QualificationAEC-Q101
CaseTO-220-3 Full Pack, Isolated Tab
Diode configuration1 Pair Common Cathode
Reverse recovery time25 ns