Vishay General Semiconductor - Diodes Division BYVB32-200HE3_A/I
MPNBYVB32-200HE3_A/I
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$0.9405Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 200 V |
| Voltage - forward (Vf) (Max) @ if | 1.15 V @ 20 A |
| Current - reverse leakage @ vr | 10 µA @ 200 V |
| Current - average rectified (Io) (per diode) | 18A |
| Operating temperature - junction | -65°C ~ 150°C |
| Grade | Automotive |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tape & Reel (TR) |
| Technology | Standard |
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Qualification | AEC-Q101 |
| Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Diode configuration | 1 Pair Common Cathode |
| Reverse recovery time | 25 ns |