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Vishay General Semiconductor - Diodes Division BYVB32-100-E3/81 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BYVB32-100-E3/81

MPNBYVB32-100-E3/81
Active
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYVB32-100-E3/81 specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if1.15 V @ 20 A
Current - reverse leakage @ vr10 µA @ 100 V
Current - average rectified (Io) (per diode)18A
Operating temperature - junction-65°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Diode configuration1 Pair Common Cathode
Reverse recovery time25 ns