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Vishay General Semiconductor - Diodes Division BYV38-TR — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BYV38-TR

MPNBYV38-TR
Active

DIODE AVALANCHE 1KV 2A SOD57

$0.2772Ref. price · indicative, final on quote
PackagingSOD-57, Axial
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYV38-TR specifications
ParameterValue
Diode typeAvalanche
MountingThrough Hole
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 1 A
Current - reverse leakage @ vr5 µA @ 1000 V
Current - average rectified2A
Operating temperature - junction-55°C~175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOD-57, Axial
Capacitance @ vr,15pF @ 4V, 1MHz
Reverse recovery time300 ns