Skip to main content
Vishay General Semiconductor - Diodes Division BYV29B-400HE3_A/I — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BYV29B-400HE3_A/I

MPNBYV29B-400HE3_A/I
Last Buy
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYV29B-400HE3_A/I specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)400 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 8 A
Current - reverse leakage @ vr10 µA @ 400 V
Current - average rectified8A
Operating temperature - junction-40°C ~ 150°C
GradeAutomotive
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR)
TechnologyStandard
QualificationAEC-Q101
CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Reverse recovery time50 ns