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Vishay General Semiconductor - Diodes Division BYV29B-300HE3_A/I — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BYV29B-300HE3_A/I

MPNBYV29B-300HE3_A/I
Last Buy
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYV29B-300HE3_A/I specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)300 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 8 A
Current - reverse leakage @ vr10 µA @ 300 V
Current - average rectified8A
Operating temperature - junction-40°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Reverse recovery time50 ns