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Vishay General Semiconductor - Diodes Division BYV29-400-E3/45 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BYV29-400-E3/45

MPNBYV29-400-E3/45
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYV29-400-E3/45 specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)400 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 8 A
Current - reverse leakage @ vr10 µA @ 400 V
Current - average rectified8A
Operating temperature - junction-40°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-220-2
Reverse recovery time50 ns