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Vishay General Semiconductor - Diodes Division BYV27-200-TAP — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BYV27-200-TAP

MPNBYV27-200-TAP
Active
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYV27-200-TAP specifications
ParameterValue
Diode typeAvalanche
MountingThrough Hole
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if1.07 V @ 3 A
Current - reverse leakage @ vr1 µA @ 200 V
Current - average rectified2A
Operating temperature - junction-55°C~175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageCut Tape (CT); Tape & Box (TB)
CaseSOD-57, Axial
Reverse recovery time25 ns