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Vishay General Semiconductor - Diodes Division BYV26EGP-E3/73 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BYV26EGP-E3/73

MPNBYV26EGP-E3/73
Active

DIODE AVALANCHE 1KV 1A DO204AC

PackagingDO-204AC, DO-15, Axial
RoHSROHS3 Compliant
SeriesSUPERECTIFIER®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYV26EGP-E3/73 specifications
ParameterValue
SeriesSUPERECTIFIER®
Diode typeAvalanche
MountingThrough Hole
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if2.5 V @ 1 A
Current - reverse leakage @ vr5 µA @ 1000 V
Current - average rectified1A
Operating temperature - junction-65°C~175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageCut Tape (CT); Tape & Box (TB)
CaseDO-204AC, DO-15, Axial
Capacitance @ vr,15pF @ 4V, 1MHz
Reverse recovery time75 ns