BYV26C-TR

Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 600V 1A SOD57

Vishay General Semiconductor - Diodes Division BYV26C-TR
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BYV26C-TR specifications
Parameter / AttributeSpecification / Value
Diode typeAvalanche
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if2.5 V @ 1 A
Current - reverse leakage @ vr5 µA @ 600 V
Current - average rectified1A
Operating temperature - junction-55°C~175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOD-57, Axial
Reverse recovery time30 ns
BYV26C-TR
[ALLOC] verified
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