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Vishay General Semiconductor - Diodes Division BAS70-00-G3-08 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BAS70-00-G3-08

MPNBAS70-00-G3-08
Active
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BAS70-00-G3-08 specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)70 V
Voltage - forward (Vf) (Max) @ if1 V @ 50 mA
Current - reverse leakage @ vr100 nA @ 30 V
Current - average rectified200mA
Operating temperature - junction125°C (Max)
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR) Cut Tape (CT)
TechnologySchottky
CaseTO-236-3, SC-59, SOT-23-3
Capacitance @ vr,2pF @ 1V, 1MHz
Reverse recovery time5 ns