Skip to main content
Vishay General Semiconductor - Diodes Division BAS16WS-G3-18 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BAS16WS-G3-18

MPNBAS16WS-G3-18
Active
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BAS16WS-G3-18 specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)75 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 150 mA
Current - reverse leakage @ vr1 µA @ 75 V
Current - average rectified250mA
Operating temperature - junction-55°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-76, SOD-323
Capacitance @ vr,2pF @ 0V, 1MHz
Reverse recovery time6 ns