Vishay General Semiconductor - Diodes Division BAS16L-G3-08
MPNBAS16L-G3-08
Active
DIODE GP 100V 250MA DFN1006-2A
$0.3200Ref. price · indicative, final on quote
Packaging0402 (1006 Metric)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Standard |
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 100 V |
| Voltage - forward (Vf) (Max) @ if | 1.25 V @ 150 mA |
| Current - reverse leakage @ vr | 1 µA @ 100 V |
| Current - average rectified | 250mA |
| Operating temperature - junction | -55°C~150°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | 0402 (1006 Metric) |
| Capacitance @ vr, | 0.36pF @ 0V, 1MHz |
| Reverse recovery time | 4 ns |