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Vishay General Semiconductor - Diodes Division BAS16-E3-18 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BAS16-E3-18

MPNBAS16-E3-18
Active

DIODE GEN PURP 75V 150MA SOT23-3

$0.2100Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BAS16-E3-18 specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)75 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 150 mA
Current - reverse leakage @ vr1 µA @ 75 V
Current - average rectified150mA
Operating temperature - junction-55°C~150°C
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Capacitance @ vr,4pF @ 0V, 1MHz
Reverse recovery time6 ns