1N914TR

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 75V 200MA DO35

Vishay General Semiconductor - Diodes Division 1N914TR
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MOQ 20 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

1N914TR specifications
Parameter / AttributeSpecification / Value
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)75 V
Voltage - forward (Vf) (Max) @ if1 V @ 10 mA
Current - reverse leakage @ vr5 µA @ 75 V
Current - average rectified200mA
Operating temperature - junction-55°C~150°C
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR); Cut Tape (CT)
CaseDO-204AH, DO-35, Axial
Capacitance @ vr,4pF @ 0V, 1MHz
Reverse recovery time4 ns
1N914TR
[ALLOC] verified
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