1N6481-E3/96

Vishay General Semiconductor - Diodes Division · SUPERECTIFIER® Series

DIODE GEN PURP 400V 1A DO213AB

Vishay General Semiconductor - Diodes Division 1N6481-E3/96
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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

1N6481-E3/96 specifications
Parameter / AttributeSpecification / Value
SeriesSUPERECTIFIER®
MountingSurface Mount
Voltage - DC reverse (Vr)400 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 1 A
Current - reverse leakage @ vr10 µA @ 400 V
Current - average rectified1A
Operating temperature - junction-65°C ~ 175°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
CaseDO-213AB, MELF (Glass)
Capacitance @ vr,8pF @ 4V, 1MHz
1N6481-E3/96
[ALLOC] verified
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