Vishay General Semiconductor - Diodes Division 1N6481-E3/96
MPN1N6481-E3/96
Active
DIODE GEN PURP 400V 1A DO213AB
$0.4400Ref. price · indicative, final on quote
PackagingDO-213AB, MELF (Glass)
RoHSROHS3 Compliant
SeriesSUPERECTIFIER®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | SUPERECTIFIER® |
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 400 V |
| Voltage - forward (Vf) (Max) @ if | 1.1 V @ 1 A |
| Current - reverse leakage @ vr | 10 µA @ 400 V |
| Current - average rectified | 1A |
| Operating temperature - junction | -65°C ~ 175°C |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Technology | Standard |
| Case | DO-213AB, MELF (Glass) |
| Capacitance @ vr, | 8pF @ 4V, 1MHz |