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Vishay General Semiconductor - Diodes Division 1N6478HE3/97 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division 1N6478HE3/97

MPN1N6478HE3/97
Active
$0.4400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N6478HE3/97 specifications
ParameterValue
SeriesSUPERECTIFIER®
MountingSurface Mount
Voltage - DC reverse (Vr)50 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 1 A
Current - reverse leakage @ vr10 µA @ 50 V
Current - average rectified1A
Operating temperature - junction-65°C ~ 175°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Reel (TR)
TechnologyStandard
CaseDO-213AB, MELF (Glass)
Capacitance @ vr,8pF @ 4V, 1MHz