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Vishay General Semiconductor - Diodes Division 1N6478-E3/96 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division 1N6478-E3/96

MPN1N6478-E3/96
Active

DIODE GEN PURP 50V 1A DO213AB

$0.4600Ref. price · indicative, final on quote
PackagingDO-213AB, MELF (Glass)
RoHSROHS3 Compliant
SeriesSUPERECTIFIER®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N6478-E3/96 specifications
ParameterValue
SeriesSUPERECTIFIER®
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)50 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 1 A
Current - reverse leakage @ vr10 µA @ 50 V
Current - average rectified1A
Operating temperature - junction-65°C~175°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseDO-213AB, MELF (Glass)
Capacitance @ vr,8pF @ 4V, 1MHz