Vishay General Semiconductor - Diodes Division 1N5818-E3/1
MPN1N5818-E3/1
Obsolete
$0.4300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Schottky |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 30 V |
| Voltage - forward (Vf) (Max) @ if | 550 mV @ 1 A |
| Current - reverse leakage @ vr | 1 mA @ 30 V |
| Current - average rectified | 1A |
| Operating temperature - junction | -65°C~125°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Bulk |
| Case | DO-204AL, DO-41, Axial |