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Vishay General Semiconductor - Diodes Division 1N5817-E3/53 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division 1N5817-E3/53

MPN1N5817-E3/53
Active

DIODE SCHOTTKY 20V 1A DO204AL

$0.3700Ref. price · indicative, final on quote
PackagingDO-204AL, DO-41, Axial
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N5817-E3/53 specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)20 V
Voltage - forward (Vf) (Max) @ if750 mV @ 3.1 A
Current - reverse leakage @ vr1 mA @ 20 V
Current - average rectified1A
Operating temperature - junction-65°C ~ 125°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageCut Tape (CT) Tape & Box (TB)
TechnologySchottky
CaseDO-204AL, DO-41, Axial
Capacitance @ vr,125pF @ 4V, 1MHz