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Vishay General Semiconductor - Diodes Division 1N5408-E3/51 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division 1N5408-E3/51

MPN1N5408-E3/51
Obsolete
$0.4800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N5408-E3/51 specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if1.2 V @ 3 A
Current - reverse leakage @ vr5 µA @ 1000 V
Current - average rectified3A
Operating temperature - junction-50°C~150°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageBulk
CaseDO-201AD, Axial
Capacitance @ vr,30pF @ 4V, 1MHz