Vishay General Semiconductor - Diodes Division 1N5407-E3/73
MPN1N5407-E3/73
Active
DIODE GEN PURP 800V 3A DO201AD
$0.5300Ref. price · indicative, final on quote
PackagingDO-201AD, Axial
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Standard |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 800 V |
| Voltage - forward (Vf) (Max) @ if | 1.2 V @ 3 A |
| Current - reverse leakage @ vr | 5 µA @ 800 V |
| Current - average rectified | 3A |
| Operating temperature - junction | -50°C~150°C |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Package | Cut Tape (CT); Tape & Box (TB) |
| Case | DO-201AD, Axial |
| Capacitance @ vr, | 30pF @ 4V, 1MHz |