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Vishay General Semiconductor - Diodes Division 1N5406GP-E3/54 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division 1N5406GP-E3/54

MPN1N5406GP-E3/54
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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N5406GP-E3/54 specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.2 V @ 3 A
Current - reverse leakage @ vr5 µA @ 400 V
Current - average rectified3A
Operating temperature - junction-50°C~150°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Reel (TR)
CaseDO-201AD, Axial
Capacitance @ vr,30pF @ 4V, 1MHz