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Vishay General Semiconductor - Diodes Division 1N5406-E3/73 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division 1N5406-E3/73

MPN1N5406-E3/73
Active

DIODE GEN PURP 600V 3A DO201AD

$0.5600Ref. price · indicative, final on quote
PackagingDO-201AD, Axial
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N5406-E3/73 specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.2 V @ 3 A
Current - reverse leakage @ vr5 µA @ 600 V
Current - average rectified3A
Operating temperature - junction-50°C~150°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageCut Tape (CT); Tape & Box (TB)
CaseDO-201AD, Axial
Capacitance @ vr,30pF @ 4V, 1MHz