1N5406-E3/73

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 3A DO201AD

Vishay General Semiconductor - Diodes Division 1N5406-E3/73
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MOQ 5 · Cut Tape (CT); Tape & Box (TB) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

1N5406-E3/73 specifications
Parameter / AttributeSpecification / Value
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.2 V @ 3 A
Current - reverse leakage @ vr5 µA @ 600 V
Current - average rectified3A
Operating temperature - junction-50°C~150°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageCut Tape (CT); Tape & Box (TB)
CaseDO-201AD, Axial
Capacitance @ vr,30pF @ 4V, 1MHz
1N5406-E3/73
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