1N5404-E3/54

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 3A DO201AD

Vishay General Semiconductor - Diodes Division 1N5404-E3/54
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

1N5404-E3/54 specifications
Parameter / AttributeSpecification / Value
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)400 V
Voltage - forward (Vf) (Max) @ if1.2 V @ 3 A
Current - reverse leakage @ vr5 µA @ 400 V
Current - average rectified3A
Operating temperature - junction-50°C~150°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseDO-201AD, Axial
Capacitance @ vr,30pF @ 4V, 1MHz
1N5404-E3/54
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