Skip to main content
Vishay General Semiconductor - Diodes Division 1N4448WS-HE3-08 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division 1N4448WS-HE3-08

MPN1N4448WS-HE3-08
Active

DIODE GEN PURP 75V 150MA SOD323

$0.2800Ref. price · indicative, final on quote
PackagingSC-76, SOD-323
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N4448WS-HE3-08 specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)75 V
Voltage - forward (Vf) (Max) @ if720 mV @ 5 mA
Current - reverse leakage @ vr5 µA @ 75 V
Current - average rectified150mA
Operating temperature - junction-55°C~150°C
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-76, SOD-323
Reverse recovery time4 ns