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Vishay General Semiconductor - Diodes Division 1N4448W-E3-18 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division 1N4448W-E3-18

MPN1N4448W-E3-18
Active
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N4448W-E3-18 specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)75 V
Voltage - forward (Vf) (Max) @ if720 mV @ 5 mA
Current - reverse leakage @ vr5 µA @ 75 V
Current - average rectified150mA
Operating temperature - junction-55°C ~ 150°C
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
CaseSOD-123
Reverse recovery time4 ns