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Vishay General Semiconductor - Diodes Division 1N4005GPE-E3/53 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division 1N4005GPE-E3/53

MPN1N4005GPE-E3/53
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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N4005GPE-E3/53 specifications
ParameterValue
SeriesSUPERECTIFIER®
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 1 A
Current - reverse leakage @ vr5 µA @ 600 V
Current - average rectified1A
Operating temperature - junction-65°C~175°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageCut Tape (CT); Tape & Box (TB)
CaseDO-204AL, DO-41, Axial
Capacitance @ vr,8pF @ 4V, 1MHz
Reverse recovery time2 µs