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Vishay General Semiconductor - Diodes Division 1N4004GPEHE3/73 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division 1N4004GPEHE3/73

MPN1N4004GPEHE3/73
Obsolete
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

1N4004GPEHE3/73 Technical Specifications
ParameterValue
SeriesSUPERECTIFIER®
Diode typeStandard
Mounting typeThrough Hole
Voltage - DC reverse (Vr)400 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 1 A
Current - reverse leakage @ vr5 µA @ 400 V
Current - average rectified1A
Operating temperature - junction-65°C~175°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Box (TB)
CaseDO-204AL, DO-41, Axial
Capacitance @ vr, f8pF @ 4V, 1MHz
Reverse recovery time2 µs