UJ4C075023K3S
UnitedSiC
750V/23MOHM, SIC, CASCODE, G4, T
UJ4C075023K3S
[IN STOCK] In Stock: 1 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 750 V |
| Drive voltage (Max rds on, min rds on) | 12V |
| Current - continuous drain (Id) @ 25°C | 66A (Tc) |
| Power dissipation | 306W (Tc) |
| Operating temperature | -55°C ~ 175°C |
| Package | Tube |
| Vgs | ±20V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 6V @ 10mA |
| Rds on (Max) @ id, vgs | 29mOhm @ 40A, 12V |
| Gate charge (Qg) (Max) @ vgs | 37.8 nC @ 15 V |
| Input capacitance (Ciss) (Max) @ vds | 1400 pF @ 400 V |
UJ4C075023K3S
[ALLOC] verified