UJ3C120150K3S

UnitedSiC

SICFET N-CH 1200V 18.4A TO247-3

UJ3C120150K3S
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Technical specifications

UJ3C120150K3S specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1200 V
Drive voltage (Max rds on, min rds on)12V
Current - continuous drain (Id) @ 25°C18.4A (Tc)
Power dissipation166.7W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±25V
TechnologySiCFET (Cascode SiCJFET)
CaseTO-247-3
Vgs(th) (Max) @ id5.5V @ 10mA
Rds on (Max) @ id, vgs180mOhm @ 5A, 12V
Gate charge (Qg) (Max) @ vgs30 nC @ 15 V
Input capacitance (Ciss) (Max) @ vds738 pF @ 100 V
UJ3C120150K3S
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