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Transphorm TPD3215M — Discrete Semiconductors

Transphorm TPD3215M

MPNTPD3215M
Obsolete
$13.1200Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

TPD3215M Technical Specifications
ParameterValue
FET type2 N-Channel (Half Bridge)
Mounting typeThrough Hole
Drain to source voltage600V
Current - continuous drain (Id) @ 25°C70A (Tc)
Power - max470W
Operating temperature-40°C~150°C(TJ)
PackageBulk
FET featureGaNFET (Gallium Nitride)
CaseModule
Rds on (Max) @ id, vgs34mOhm @ 30A, 8V
Gate charge (Qg) (Max) @ vgs28nC @ 8V
Input capacitance (Ciss) (Max) @ vds2260pF @ 100V