Transphorm TPD3215M
MPNTPD3215M
Obsolete
$13.1200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | 2 N-Channel (Half Bridge) |
| Mounting | Through Hole |
| Drain to source voltage | 600V |
| Current - continuous drain (Id) @ 25°C | 70A (Tc) |
| Power - max | 470W |
| Operating temperature | -40°C~150°C(TJ) |
| Package | Bulk |
| FET feature | GaNFET (Gallium Nitride) |
| Case | Module |
| Rds on (Max) @ id, vgs | 34mOhm @ 30A, 8V |
| Gate charge (Qg) (Max) @ vgs | 28nC @ 8V |
| Input capacitance (Ciss) (Max) @ vds | 2260pF @ 100V |