Skip to main content
Transphorm TP65H035G4WS — Logic ICs

Transphorm TP65H035G4WS

MPNTP65H035G4WS
Active

GANFET N-CH 650V 46.5A TO247-3

$18.65Ref. price · indicative, final on quote
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

TP65H035G4WS Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C46.5A (Tc)
Power dissipation156W (Tc)
Operating temperature-55°C ~ 150°C
PackageTube
Vgs±20V
TechnologyGaNFET (Cascode Gallium Nitride FET)
CaseTO-247-3
Vgs(th) (Max) @ id4.8V @ 1mA
Rds on (Max) @ id, vgs41mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs22 nC @ 0 V
Input capacitance (Ciss) (Max) @ vds1500 pF @ 400 V