Transphorm TP65H070LDG
MPNTP65H070LDG
Active
GANFET N-CH 650V 25A 3PQFN
$13.12Ref. price · indicative, final on quote
Packaging3-PowerDFN
SeriesTP65H070L
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TP65H070L |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 25A (Tc) |
| Power dissipation | 96W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Case | 3-PowerDFN |
| Vgs(th) (Max) @ id | 4.8V @ 700µA |
| Rds on (Max) @ id, vgs | 85mOhm @ 16A, 10V |
| Gate charge (Qg) (Max) @ vgs | 9.3 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 600 pF @ 400 V |