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Transphorm TP65H015G5WS — Logic ICs

Transphorm TP65H015G5WS

MPNTP65H015G5WS
Active

650 V 95 A GAN FET

$33.54Ref. price · indicative, final on quote
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

TP65H015G5WS Technical Specifications
ParameterValue
SeriesSuperGaN™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C93A (Tc)
Power dissipation266W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyGaNFET (Gallium Nitride)
CaseTO-247-3
Vgs(th) (Max) @ id4.8V @ 2mA
Rds on (Max) @ id, vgs18mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs100 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5218 pF @ 400 V