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Toshiba Semiconductor RN27 Memory Series

4 variants · Toshiba Semiconductor

About the Toshiba Semiconductor RN27 Memory Series

The Toshiba Semiconductor RN27 Memory Series series groups 4 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common current - collector (Ic) of 100mA, current - collector cutoff of 100nA (ICBO) and frequency of 200MHz. Variants differ by case, DC current gain (hFE) (Min) @ ic, vce and FET type, so you can match the exact case your application requires using the selection guide below. All listed Toshiba Semiconductor RN27 Memory Series part numbers are active and orderable.

Select a variant by

Case
5-TSSOP, SC-70-5, SOT-353 · SOT-553
DC current gain (hFE) (Min) @ ic, vce
70 @ 10mA, 5V · 80 @ 10mA, 5V · 120 @ 1mA, 5V
FET type
2 PNP - Pre-Biased (Dual) · 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - max
100mW · 200mW
Resistor - base (R1)
10kOhms · 22kOhms · 47kOhms
Resistor - emitter base (R2)
22kOhms · 47kOhms

Shared specifications

Current - collector (Ic)
100mA
Current - collector cutoff
100nA (ICBO)
Frequency
200MHz
Mounting
Surface Mount
Package
Tape & Reel (TR); Cut Tape (CT)
Vce saturation (Max) @ ib, ic
300mV @ 250µA, 5mA
Voltage - collector emitter breakdown
50V

Variant comparison

ParameterRN2711,LFRN2703JE(TE85L,F)RN2704JE(TE85L,F)RN2708JE(TE85L,F)
Case5-TSSOP, SC-70-5, SOT-353SOT-553SOT-553SOT-553
DC current gain (hFE) (Min) @ ic, vce120 @ 1mA, 5V70 @ 10mA, 5V80 @ 10mA, 5V80 @ 10mA, 5V
FET type2 PNP - Pre-Biased (Dual) (Emitter Coupled)2 PNP - Pre-Biased (Dual) (Emitter Coupled)2 PNP - Pre-Biased (Dual) (Emitter Coupled)2 PNP - Pre-Biased (Dual)
Power - max200mW100mW100mW100mW
Resistor - base (R1)10kOhms22kOhms47kOhms22kOhms
Resistor - emitter base (R2)22kOhms47kOhms47kOhms

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All variants