TPN7R506NH,L1Q
Toshiba Semiconductor · U-MOSVIII-H Series
MOSFET N-CH 60V 26A 8TSON
[IN STOCK] In Stock: 15 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | U-MOSVIII-H |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 6.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 26A (Tc) |
| Power dissipation | 700mW (Ta), 42W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 4V @ 200µA |
| Rds on (Max) @ id, vgs | 7.5mOhm @ 13A, 10V |
| Gate charge (Qg) (Max) @ vgs | 22 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1800 pF @ 30 V |
TPN7R506NH,L1Q
[ALLOC] verified