TPN3R704PL,L1Q

Toshiba Semiconductor · U-MOSIX-H Series

MOSFET N-CH 40V 80A 8TSON

Toshiba Semiconductor TPN3R704PL,L1Q
[IN STOCK] In Stock: 2,342 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

TPN3R704PL,L1Q specifications
Parameter / AttributeSpecification / Value
SeriesU-MOSIX-H
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation630mW (Ta), 86W (Tc)
Operating temperature175°C
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.4V @ 200µA
Rds on (Max) @ id, vgs3.7mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2500 pF @ 20 V
TPN3R704PL,L1Q
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