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Toshiba Semiconductor TPHR9003NL,L1Q

TPHR9003NL,L1Q - Toshiba Semiconductor

MPNTPHR9003NL,L1Q
End of Life

MOSFET N-CH 30V 60A 8SOP

$2.21Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSRoHS Compliant
SeriesU-MOSVIII-H
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TPHR9003NL,L1Q specifications
ParameterValue
SeriesU-MOSVIII-H
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C60A (Tc)
Power dissipation1.6W (Ta), 78W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.3V @ 1mA
Rds on (Max) @ id, vgs0.9mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs74 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6900 pF @ 15 V