TPHR6503PL,L1Q

Toshiba Semiconductor · U-MOSIX-H Series

MOSFET N-CH 30V 150A 8SOP

Toshiba Semiconductor TPHR6503PL,L1Q
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

TPHR6503PL,L1Q specifications
Parameter / AttributeSpecification / Value
SeriesU-MOSIX-H
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C150A (Tc)
Power dissipation960mW (Ta), 170W (Tc)
Operating temperature175°C
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.1V @ 1mA
Rds on (Max) @ id, vgs0.65mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10000 pF @ 15 V
TPHR6503PL,L1Q
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