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Toshiba Semiconductor TPHR6503PL1,LQ — Logic ICs

Toshiba Semiconductor TPHR6503PL1,LQ

MPNTPHR6503PL1,LQ
End of Life

UMOS9 SOP-ADV(N) PD=210W F=1MHZ

$2.2Ref. price · indicative, final on quote
Packaging8-PowerTDFN
SeriesU-MOSIX-H
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TPHR6503PL1,LQ specifications
ParameterValue
SeriesU-MOSIX-H
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C150A (Tc)
Power dissipation960mW (Ta), 210W (Tc)
Operating temperature175°C
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.1V @ 1mA
Rds on (Max) @ id, vgs0.65mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10000 pF @ 15 V