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Toshiba Semiconductor TPH7R006PL,L1Q

Toshiba Semiconductor TPH7R006PL,L1Q

MPNTPH7R006PL,L1Q
End of Life

MOSFET N-CH 60V 60A 8SOP

$0.92Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSRoHS Compliant
SeriesU-MOSIX-H
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TPH7R006PL,L1Q specifications
ParameterValue
SeriesU-MOSIX-H
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C60A (Tc)
Power dissipation81W (Tc)
Operating temperature175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.5V @ 200µA
Rds on (Max) @ id, vgs13.5mOhm @ 10A, 4.5V
Gate charge (Qg) (Max) @ vgs22 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1875 pF @ 30 V