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Toshiba Semiconductor TPH14006NH,L1Q

TPH14006NH,L1Q - Toshiba Semiconductor

MPNTPH14006NH,L1Q
End of Life

MOSFET N CH 60V 14A 8-SOP ADV

$1.1Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSRoHS Compliant
SeriesU-MOSVIII-H
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TPH14006NH,L1Q specifications
ParameterValue
SeriesU-MOSVIII-H
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6.5V, 10V
Current - continuous drain (Id) @ 25°C14A (Ta)
Power dissipation1.6W (Ta), 32W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id4V @ 200µA
Rds on (Max) @ id, vgs14mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs16 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1300 pF @ 30 V