TK750A60F,S4X
Toshiba Semiconductor · U-MOSIX Series
MOSFET N-CH 600V 10A TO220SIS
[IN STOCK] In Stock: 1,250 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | U-MOSIX |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Ta) |
| Power dissipation | 40W (Tc) |
| Operating temperature | 150°C |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 1mA |
| Rds on (Max) @ id, vgs | 750mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 30 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1130 pF @ 300 V |
TK750A60F,S4X
[ALLOC] verified