TK290P65Y,RQ
Toshiba Semiconductor · DTMOSV Series
MOSFET N-CH 650V 11.5A DPAK
[IN STOCK] In Stock: 77 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | DTMOSV |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11.5A (Tc) |
| Power dissipation | 100W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 450µA |
| Rds on (Max) @ id, vgs | 290mOhm @ 5.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 25 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 730 pF @ 300 V |
TK290P65Y,RQ
[ALLOC] verified