The Toshiba TBC847B,LM is a general-purpose NPN transistor in the standard SOT-23-3 surface-mount package. It is rated for a collector-emitter breakdown voltage of 50 V and a continuous collector current of 150 mA, making it suitable for low-power switching and amplification in compact PCB layouts.
The 50 V Vce breakdown and 150 mA Ic ceiling define the safe operating area for general-purpose switching and driver stages. Maximum Vce saturation is 400 mV at 100 mA base current and 5 mA collector current — this low saturation voltage keeps conduction losses minimal in low-current switched loads. The 100 MHz transition frequency supports audio-frequency amplification and moderate-speed digital switching. Maximum power dissipation is 320 mW, and the junction temperature rating extends to 150°C. In a typical SOT-23-3 layout with minimal copper, derate the power below 320 mW at ambient temperatures above 25°C to stay within the thermal budget.
The SOT-23-3 package (also known as TO-236-3 or SC-59) has a 0.95 mm pin pitch and a low profile suited for dense assemblies.