SSM6N815R,LF
Toshiba Semiconductor · U-MOSVIII-H Series
MOSFET 2N-CH 100V 2A 6TSOPF
[IN STOCK] In Stock: 59 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | U-MOSVIII-H |
| Mounting | Surface Mount |
| Drain to source voltage | 100V |
| Current - continuous drain (Id) @ 25°C | 2A (Ta) |
| Power - max | 1.8W (Ta) |
| Operating temperature | 150°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate, 4V Drive |
| Configuration | 2 N-Channel (Dual) |
| Case | 6-SMD, Flat Leads |
| Vgs(th) (Max) @ id | 2.5V @ 100µA |
| Rds on (Max) @ id, vgs | 103mOhm @ 2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 3.1nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 290pF @ 15V |
SSM6N815R,LF
[ALLOC] verified