
SSM6J507NU,LF
Toshiba Semiconductor
58 variants · Toshiba Semiconductor
The Toshiba Semiconductor Toshiba Semiconductor SSM6 Series series groups 58 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. The listed variants share a common mounting type of Surface Mount, package of Tape & Reel (TR); Cut Tape (CT) and technology of MOSFET (Metal Oxide). Variants differ by case, current - continuous drain (Id) @ 25°C and drain to source voltage, so you can match the exact case your application requires using the selection guide below.
| Parameter | SSM6J507NU,LF | SSM6N37FU,LF | SSM6N58NU,LF | SSM6K513NU,LF |
|---|---|---|---|---|
| Case | 6-WDFN Exposed Pad | 6-TSSOP, SC-88, SOT-363 | 6-WDFN Exposed Pad | 6-WDFN Exposed Pad |
| Current - continuous drain (Id) @ 25°C | 10A (Ta) | 250mA (Ta) | 4A | 15A (Ta) |
| Drain to source voltage | 30 V | 20V | 30V | 30 V |
| Input capacitance (Ciss) (Max) @ vds | 1150 pF @ 15 V | 12pF @ 10V | 129pF @ 15V | 1130 pF @ 15 V |
| Operating temperature | 150°C (TJ) | 150°C | 150°C (TJ) | 150°C (TA) |
| Rds on (Max) @ id, vgs | 20mOhm @ 4A, 10V | 2.2Ohm @ 100mA, 4.5V | 84mOhm @ 2A, 4.5V | 8.9mOhm @ 4A, 10V |
| Vgs(th) (Max) @ id | 2.2V @ 250µA | 1V @ 1mA | 1V @ 1mA | 2.1V @ 100µA |
| Gate charge (Qg) (Max) @ vgs | 20.4 nC @ 4.5 V | — | 1.8nC @ 4.5V | 7.5 nC @ 4.5 V |
Request a quote on any Toshiba Semiconductor SSM6 Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.

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Toshiba Semiconductor